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PB035N08N3GATMA1
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PB035N08N3GATMA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPB035N08N3GATMA1
Package: TO-263-3
RoHS:
Datasheet:

PDF For IPB035N08N3GATMA1

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Description:
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
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  • Quantity Unit Price
  • 1+ $6.18615
  • 10+ $5.51493
  • 30+ $5.10408
  • 100+ $4.76181

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$6.18615

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Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Forward Transconductance - Min 75 S
Rds On - Drain-Source Resistance 2.8 mOhms
Rise Time 79 ns
Fall Time 14 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 214 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-263-3
Length 10 mm
Width 9.25 mm
Height 4.4 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Series OptiMOS 3
Packaging Cut Tape or Reel
Part # Aliases G IPB035N08N3 IPB35N8N3GXT SP000457588
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 117 nC
Technology Si
Id - Continuous Drain Current 100 A
Vds - Drain-Source Breakdown Voltage 80 V
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 23 ns
Factory Pack Quantity 1000
Subcategory MOSFETs
Unit Weight 0.139332 oz
Tradename OptiMOS
Related Products
748847
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$
1 6.18615
10 5.51493
30 5.10408
100 4.76181