PD26N06S2L35ATMA1
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PD26N06S2L35ATMA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPD26N06S2L35ATMA1
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MOSFET N-CH 55V 30A TO252-3
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Specifications
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Drain To Source Voltage (Vdss) 55 V
Rds On (Max) @ Id, Vgs 35mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 621 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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