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PD80R1K4CEATMA1
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PD80R1K4CEATMA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPD80R1K4CEATMA1
Package: TO-252-3
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Datasheet:

PDF For IPD80R1K4CEATMA1

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Description:
MOSFET N-Ch 800V 3.9A DPAK-2
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  • Quantity Unit Price
  • 1+ $1.81926
  • 10+ $1.77903
  • 30+ $1.75212
  • 100+ $1.72665

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$1.81926

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Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
Rds On - Drain-Source Resistance 1.4 Ohms
Rise Time 15 ns
Fall Time 12 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 63 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-252-3
Length 6.5 mm
Width 6.22 mm
Height 2.3 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series CoolMOS CE
Packaging Cut Tape or Reel
Part # Aliases IPD80R1K4CE SP001130972
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Vgs Th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 23 nC
Technology Si
Id - Continuous Drain Current 3.9 A
Vds - Drain-Source Breakdown Voltage 800 V
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 25 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Unit Weight 0.139332 oz
Tradename CoolMOS
Related Products
725271
1148
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$
1 1.81926
10 1.77903
30 1.75212
100 1.72665