Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 2.3 mOhms |
| Rise Time | 9 ns |
| Fall Time | 13 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 136 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10 mm |
| Width | 4.4 mm |
| Height | 15.65 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | XPP80N03 |
| Packaging | Tube |
| Part # Aliases | IPP80N03S4L-03 IPP8N3S4L3XK SP000275328 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 16 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 140 nC |
| Technology | Si |
| Id - Continuous Drain Current | 80 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 62 ns |
| Typical Turn-On Delay Time | 14 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.211644 oz |
