Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 190 mOhms |
| Rise Time | 8.4 ns |
| Fall Time | 6.4 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 151 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Length | 16.13 mm |
| Width | 5.21 mm |
| Height | 21.1 mm |
| Series | CoolMOS CFD2 |
| Packaging | Tube |
| Part # Aliases | IPW65R190CFDFKSA1 IPW65R19CFDXK SP000905376 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 68 nC |
| Technology | Si |
| Id - Continuous Drain Current | 17.5 A |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Factory Pack Quantity | 240 |
| Subcategory | MOSFETs |
| Unit Weight | 1.340411 oz |
| Tradename | CoolMOS |
