Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 100 S |
| Rds On - Drain-Source Resistance | 7 mOhms |
| Rise Time | 140 ns |
| Fall Time | 120 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Height | 2.3 mm |
| Maximum Operating Temperature | + 175 C |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001559612 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 220 nC |
| Technology | Si |
| Id - Continuous Drain Current | 106 A |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Factory Pack Quantity | 800 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
