Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | FET |
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 0.2 S |
| Rds On - Drain-Source Resistance | 4 Ohms |
| Rise Time | 4.5 ns |
| Fall Time | 4.5 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 300 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-323-6 |
| Length | 2 mm |
| Width | 1.25 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | FDG6301N |
| Packaging | Cut Tape or Reel |
| Part # Aliases | FDG6301N_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Technology | Si |
| Id - Continuous Drain Current | 220 mA |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Typical Turn-Off Delay Time | 4 ns |
| Typical Turn-On Delay Time | 5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000988 oz |
