Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 132 S |
| Rds On - Drain-Source Resistance | 3.8 mOhms |
| Rise Time | 26 ns |
| Fall Time | 15 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 263 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Height | 16.3 mm |
| Series | FDP045N10A |
| Packaging | Tube |
| Part # Aliases | FDP045N10A_F102 |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 57 nC |
| Technology | Si |
| Id - Continuous Drain Current | 120 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Factory Pack Quantity | 800 |
| Subcategory | MOSFETs |
| Unit Weight | 0.063493 oz |
