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2N7002ET1G
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2N7002ET1G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: 2N7002ET1G
Package: SOT-23-3
RoHS:
Datasheet:

PDF For 2N7002ET1G

ECAD:
Description:
MOSFET NFET SOT23 60V 310mA 2.5Ohms
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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Product MOSFET Small Signal
Forward Transconductance - Min 530 mS
Rds On - Drain-Source Resistance 2.5 Ohms
Rise Time 1.2 ns
Fall Time 3.6 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 420 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Length 2.9 mm
Width 1.3 mm
Height 0.94 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series 2N7002E
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 0.81 nC
Technology Si
Id - Continuous Drain Current 310 mA
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 4.8 ns
Typical Turn-On Delay Time 1.7 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
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