Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 2 S, 2 S |
| Rds On - Drain-Source Resistance | 375 mOhms, 900 mOhms |
| Rise Time | 227 ns, 23 ns |
| Fall Time | 506 ns, 36 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 0.55 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Length | 2 mm |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NTJD4105C |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 4.5 V, - 1.8 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV, 450 mV |
| Qg - Gate Charge | 1.3 nC, 2.2 nC |
| Technology | Si |
| Id - Continuous Drain Current | 630 mA, - 775 mA |
| Vds - Drain-Source Breakdown Voltage | 20 V, 8 V |
| Typical Turn-Off Delay Time | 786 ns, 50 ns |
| Typical Turn-On Delay Time | 83 ns, 13 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000265 oz |
