Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 4.2 S, 3.1 S |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rise Time | 4.7 ns, 13.2 ns |
| Fall Time | 4.7 ns, 13.2 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 710 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | WDFN-6 |
| Length | 2 mm |
| Width | 2 mm |
| Height | 0.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NTLJD3119C |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Technology | Si |
| Id - Continuous Drain Current | 3.8 A |
| Vds - Drain-Source Breakdown Voltage | 21 V, 20 V |
| Typical Turn-Off Delay Time | 11.1 ns, 13.7 ns |
| Typical Turn-On Delay Time | 3.8 ns, 5.2 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
