Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 550 mOhms, 900 mOhms |
| Rise Time | 4 ns, 12 ns |
| Fall Time | 4 ns, 12 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-563-6 |
| Length | 1.6 mm |
| Width | 1.2 mm |
| Height | 0.55 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NTZD3155C |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 6 V |
| Technology | Si |
| Id - Continuous Drain Current | 540 mA |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 16 ns, 35 ns |
| Typical Turn-On Delay Time | 6 ns, 10 ns |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000106 oz |
