Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 110 mOhms |
| Rise Time | 17 ns |
| Fall Time | 10.7 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 210 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | STB35N60DM2 |
| Packaging | Cut Tape or Reel |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 54 nC |
| Technology | Si |
| Id - Continuous Drain Current | 28 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 68 ns |
| Typical Turn-On Delay Time | 21.2 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.079014 oz |
| Tradename | MDmesh |
