Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| Rise Time | 61 ns |
| Fall Time | 48 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 200 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Height | 15.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | STP110N8F6 |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel Power MOSFET |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 150 nC |
| Technology | Si |
| Id - Continuous Drain Current | 110 A |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Typical Turn-Off Delay Time | 162 ns |
| Typical Turn-On Delay Time | 24 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.011640 oz |
| Tradename | STripFET |
