P30N65DM6AG
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P30N65DM6AG , STMicroelectronics

Manufacturer: STMicroelectronics
Mfr.Part #: STP30N65DM6AG
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Specifications
Product Attribute Attribute Value
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V
Vgs(Th) (Max) @ Id 4.75V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss) 650 V
Package / Case TO-220-3
Fet Type N-Channel
Vgs (Max) ±25V
Fet Feature -
Power Dissipation (Max) 223W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V
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