W1R104PB,L1XHQ
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W1R104PB,L1XHQ , TAEC Product (Toshiba Electronic Devices and Storage Corporation)

Manufacturer: TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Mfr.Part #: TPW1R104PB,L1XHQ
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MOSFET N-CH 40V 120A 8DSOP
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Specifications
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 40 V
Vgs(Th) (Max) @ Id 3V @ 500µA
Mounting Type Surface Mount
Fet Type N-Channel
Vgs (Max) ±20V
Rds On (Max) @ Id, Vgs 1.14mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Fet Feature -
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 10 V
Power Dissipation (Max) 960mW (Ta), 132W (Tc)
Operating Temperature 175°C
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
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