Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 262 S |
| Rds On - Drain-Source Resistance | 3.1 mOhms |
| Rise Time | 16 ns |
| Fall Time | 6 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 300 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Height | 16.51 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Series | CSD19505KCS |
| Packaging | Tube |
| Brand | Texas Instruments |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.6 V |
| Qg - Gate Charge | 76 nC |
| Technology | Si |
| Id - Continuous Drain Current | 100 A |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Unit Weight | 0.211644 oz |
| Tradename | NexFET |
