Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 76 S, 51 S |
| Rise Time | 6.8 ns, 7.5 ns |
| Fall Time | 1.7 ns, 1.6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 6 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | LSON-CLIP-8 |
| Length | 3.3 mm |
| Width | 3.3 mm |
| Height | 1.5 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | CSD87330Q3D |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Configuration | Dual |
| Development Kit | EVMK2GXS, EVMK2G, EVMK2GX |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V, 750 mV |
| Qg - Gate Charge | 4.8 nC, 9.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 20 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 9.4 ns, 9.1 ns |
| Typical Turn-On Delay Time | 4.5 ns, 4.5 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.002399 oz |
| Tradename | NexFET |
