C58NYG2S0HBAI4
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C58NYG2S0HBAI4 , Toshiba Memory

Manufacturer: Toshiba Memory
Mfr.Part #: TC58NYG2S0HBAI4
Package: TFBGA-63
RoHS:
Datasheet:

PDF For TC58NYG2S0HBAI4

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Description:
NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
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Specifications
Product Attribute Attribute Value
Manufacturer Toshiba
Product Category NAND Flash
RoHS
Product NAND Flash
Maximum Clock Frequency -
Data Bus Width 8 bit
Organization 512 M x 8
Mounting Style SMD/SMT
Product Type NAND Flash
Timing Type Synchronous
Package / Case TFBGA-63
Memory Size 4 Gbit
Architecture Block Erase
Memory Type NAND
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Supply Voltage - Min 1.7 V
Supply Voltage - Max 1.95 V
Supply Current - Max 30 mA
Interface Type Parallel
Moisture Sensitive Yes
Speed 25 ns
Packaging Tray
Brand Toshiba Memory
Factory Pack Quantity 210
Subcategory Memory & Data Storage
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