Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 1 S |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| Rise Time | 3.6 ns |
| Fall Time | 17 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 0.9 mm |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | T2N7002 |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.1 V |
| Qg - Gate Charge | 0.39 nC |
| Technology | Si |
| Id - Continuous Drain Current | 400 mA |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 5.5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
| Tradename | U-MOSVII-H |
