Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 150 mOhms |
| Rise Time | 45 ns |
| Fall Time | 6 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 165 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Length | 15.94 mm |
| Width | 5.02 mm |
| Height | 20.95 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | TK20N60W |
| Packaging | Tube |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 55 nC |
| Technology | Si |
| Id - Continuous Drain Current | 20 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 90 ns |
| Factory Pack Quantity | 30 |
| Subcategory | MOSFETs |
| Tradename | DTMOSIV |
