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SI2312BDS-T1-GE3
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SI2312BDS-T1-GE3 , Vishay Intertech

Manufacturer: Vishay Intertech
Mfr.Part #: SI2312BDS-T1-GE3
Package: SOT-23(SOT-23-3)
RoHS:
Datasheet:

PDF For SI2312BDS-T1-GE3

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Description:
MOSFET N Trench 20V 3.9A 850mV @ 250uA 31 mΩ @ 5A,4.5V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 5+ $0.25056
  • 50+ $0.20358
  • 150+ $0.18342
  • 500+ $0.14058
  • 3000+ $0.12933
  • 6000+ $0.12267

In Stock: 9935

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$1.2528

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Specifications
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 3.9A
Power Dissipation-Max (Ta=25°C) 750mW
Rds On - Drain-Source Resistance 31mΩ @ 5A,4.5V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 850mV @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
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$
5 0.25056
50 0.20358
150 0.18342
500 0.14058
3000 0.12933
6000 0.12267