Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 1.9 S |
| Rds On - Drain-Source Resistance | 270 mOhms |
| Rise Time | 64 ns |
| Fall Time | 27 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 1.3 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | HVMDIP-4 |
| Length | 6.29 mm |
| Width | 5 mm |
| Height | 3.37 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 5 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 12 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.3 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 9.8 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
