Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 0.4 S, 1 S |
| Rds On - Drain-Source Resistance | 750 mOhms, 1.2 Ohms |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 280 mW, 280 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-563-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SI1 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI1016X-GE3 |
| Brand | Vishay / Siliconix |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 750 pC, 1500 pC |
| Technology | Si |
| Id - Continuous Drain Current | 400 mA, 600 mA |
| Typical Turn-Off Delay Time | 25 ns, 35 ns |
| Typical Turn-On Delay Time | 5 ns, 5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.001129 oz |
| Tradename | TrenchFET |
