Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 3 mS |
| Rds On - Drain-Source Resistance | 235 mOhms |
| Rise Time | 13 ns |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 420 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Length | 2.05 mm |
| Width | 2.05 mm |
| Height | 0.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SI1 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI1958DH-T1-GE3 |
| Brand | Vishay / Siliconix |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Qg - Gate Charge | 2 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.1 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 6 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000988 oz |
| Tradename | TrenchFET |
