Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 35 S |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Rise Time | 9 ns |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 3.1 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SO-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SI4 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI4288DY-GE3 |
| Brand | Vishay / Siliconix |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 10 nC |
| Technology | Si |
| Id - Continuous Drain Current | 9.2 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 7 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.017870 oz |
| Tradename | TrenchFET |
