Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 3.5 S |
| Rds On - Drain-Source Resistance | 290 mOhms |
| Rise Time | 10 ns |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 3 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.6 mm |
| Height | 1.45 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | SQ |
| Packaging | Cut Tape or Reel |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 11.5 nC |
| Technology | Si |
| Id - Continuous Drain Current | 2.2 A |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
| Tradename | TrenchFET |
