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QA410EJ-T1_GE3
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QA410EJ-T1_GE3 , Vishay / Siliconix

Manufacturer: Vishay / Siliconix
Mfr.Part #: SQA410EJ-T1_GE3
Package: SC-70-6
RoHS:
Datasheet:

PDF For SQA410EJ-T1_GE3

ECAD:
Description:
MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified
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  • Quantity Unit Price
  • 1+ $0.45261
  • 10+ $0.40428
  • 30+ $0.38007
  • 100+ $0.35721
  • 500+ $0.34245
  • 1000+ $0.33444

In Stock: 2360

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Specifications
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 31 S
Rds On - Drain-Source Resistance 23 mOhms
Rise Time 8 ns
Fall Time 8 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 13.6 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SC-70-6
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Qualification AEC-Q101
Series SQ
Packaging Cut Tape or Reel
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 8 V
Vgs Th - Gate-Source Threshold Voltage 450 mV
Qg - Gate Charge 8 nC
Technology Si
Id - Continuous Drain Current 7.8 A
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 8 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Tradename TrenchFET
Related Products
725487
1148
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$
1 0.45261
10 0.40428
30 0.38007
100 0.35721
500 0.34245
1000 0.33444