Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 80 mS |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Rise Time | 3.4 ns |
| Fall Time | 9.9 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 304 pC |
| Technology | Si |
| Id - Continuous Drain Current | 300 mA |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 15.7 ns |
| Typical Turn-On Delay Time | 3.9 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000212 oz |
