Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 4.8 Ohms |
| Rise Time | 27 ns |
| Fall Time | 29 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 125 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Length | 16.26 mm |
| Width | 5.3 mm |
| Height | 21.46 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | IXTH3N100 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 3 A |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Typical Turn-Off Delay Time | 75 ns |
| Typical Turn-On Delay Time | 22 ns |
| Factory Pack Quantity | 30 |
| Subcategory | MOSFETs |
| Unit Weight | 0.229281 oz |
