PB107N20N3G
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PB107N20N3G , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPB107N20N3G
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MOSFET N Channel 200V 88A(Tc) 4V @ 270uA 10.7mΩ @ 88A,10V TO-263-3 RoHS
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Specifications
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 88A(Tc)
Power Dissipation-Max (Ta=25°C) 300W(Tc)
Rds On - Drain-Source Resistance 10.7mΩ @ 88A,10V
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 4V @ 270uA
Vds - Drain-Source Breakdown Voltage 200V
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