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PB107N20N3G
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PB107N20N3G , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPB107N20N3G
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RoHS:
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PDF For IPB107N20N3G

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Description:
MOSFET N Channel 200V 88A(Tc) 4V @ 270uA 10.7mΩ @ 88A,10V TO-263-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 1+ $2.71530
  • 10+ $2.36745
  • 30+ $2.16072
  • 100+ $1.95120
  • 500+ $1.85454
  • 1000+ $1.81152

In Stock: 335

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$2.7153

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Specifications
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 88A(Tc)
Power Dissipation-Max (Ta=25°C) 300W(Tc)
Rds On - Drain-Source Resistance 10.7mΩ @ 88A,10V
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 4V @ 270uA
Vds - Drain-Source Breakdown Voltage 200V
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$
1 2.71530
10 2.36745
30 2.16072
100 1.95120
500 1.85454
1000 1.81152