Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Microchip |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 42 S |
| Rds On - Drain-Source Resistance | 130 mOhms |
| Rise Time | 55 ns |
| Fall Time | 44 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 780 W |
| Product Type | MOSFET |
| Package / Case | TO-247-3 |
| Length | 21.46 mm |
| Width | 16.26 mm |
| Height | 5.31 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Microchip / Microsemi |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 215 nC |
| Technology | Si |
| Id - Continuous Drain Current | 45 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 145 ns |
| Typical Turn-On Delay Time | 48 ns |
| Factory Pack Quantity | 1 |
| Subcategory | MOSFETs |
| Unit Weight | 1.340411 oz |
| Tradename | POWER MOS 8 |
