Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 297 S |
| Rds On - Drain-Source Resistance | 2.3 mOhms |
| Rise Time | 7 ns |
| Fall Time | 5 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 375 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Length | 9.25 mm |
| Width | 10.26 mm |
| Height | 19.7 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Moisture Sensitive | Yes |
| Series | CSD19506KTT |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 120 nC |
| Technology | Si |
| Id - Continuous Drain Current | 200 A |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 14 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Tradename | NexFET |
