Si2308BDS-T1-GE3
Payment:
Delivery:

Si2308BDS-T1-GE3 , Vishay Intertech

Manufacturer: Vishay Intertech
Mfr.Part #: Si2308BDS-T1-GE3
Package: SOT-23-3
RoHS:
Datasheet:

PDF For Si2308BDS-T1-GE3

ECAD:
Description:
MOSFET N Trench 60V 2.3A 3V @ 250uA 156 mΩ @ 1.9A,10V SOT-23-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 1+ $0.13098
  • 1000+ $0.12684

In Stock: 8861

Ship Immediately
Quantity Minimum 1
BUY
Total

$0.13098

  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.3A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 156mΩ @ 1.9A,10V
Package / Case SOT-23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Related Products
4582481
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4582481&N=
$
1 0.13098
1000 0.12684