Notice: Due to the Labour Day, Orders placed during 1st ~ 5th May will be shipped after the holidays. View More
Si2308BDS-T1-GE3
Payment:
Delivery:

Si2308BDS-T1-GE3 , Vishay Intertech

Manufacturer: Vishay Intertech
Mfr.Part #: Si2308BDS-T1-GE3
Package: SOT-23-3
RoHS:
Datasheet:

PDF For Si2308BDS-T1-GE3

ECAD:
Description:
MOSFET N Trench 60V 2.3A 3V @ 250uA 156 mΩ @ 1.9A,10V SOT-23-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 10+ $0.14700
  • 50+ $0.13535
  • 200+ $0.12564
  • 600+ $0.11593
  • 1500+ $0.10816
  • 3000+ $0.10331

In Stock: 1293

Ship Immediately
Quantity Minimum 10
BUY
Total

$1.47

  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.3A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 156mΩ @ 1.9A,10V
Package / Case SOT-23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Related Products
4582481
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4582481&N=
$
10 0.14700
50 0.13535
200 0.12564
600 0.11593
1500 0.10816
3000 0.10331