Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 57 mOhms |
| Rise Time | 46 ns |
| Fall Time | 13 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 250 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220AB-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | E |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 98 nC |
| Technology | Si |
| Id - Continuous Drain Current | 40 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 28 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.063493 oz |
